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Archive 1

Scarcity

Is ruthenium rare in the universe as a whole, or is it simply rare in the Earth's crust? Does the platinum group concentrate in the Earth's core?--Syd Henderson 03:26, 10 October 2006 (UTC)

Fission-derived Ruthenium

Are you sure that the activity figures are expressed in Curies? A Curie is HUGE, 1 Ci/gram beign defined as the activity of pure radium! The values quoted appear very far from "safe" to me, even those after 20 years of quarantine time... --159.149.103.4 11:38, 6 November 2006 (UTC)

A curie is defined as 37 billion disintegrations per second. The curie was originally a comparison of the activity of a sample to the activity of one gram of radium, which at the time was measured as 37 billion disintegrations per second. A radioactive sample that has an activity of 74 billion disintegrations per second, has an activity of 2 curies. When more accurate techniques measured a slightly different activity for radium, the reference to radium was dropped. - http://www.epa.gov/radiation/understand/curies.htm
Drrocket 00:45, 24 November 2006 (UTC)

Untitled

Article changed over to new Wikipedia:WikiProject Elements format by maveric149. Elementbox converted 12:06, 6 July 2005 by Femto (previous revision was that of 01:15, 30 June 2005).

Information Sources

Some of the text in this entry was rewritten from Los Alamos National Laboratory - Ruthenium. Additional text was taken directly from the Elements database 20001107 (via dict.org), and WordNet (r) 1.7 (via dict.org). Data for the table were obtained from the sources listed on the subject page and Wikipedia:WikiProject Elements but were reformatted and converted into SI units.

Talk

Added some material on ruthenium CVD. This "review" isn't complete and I'll probably return to it to add more on the various beta-diketonates tried. ALD of Ru had been done by Aaltonen et al at the University of Helsinki, and that should be added. Also, the applications of ruthenium thin films are very poorly described and should be clarified. Globalistgirl (talk) 05:10, 18 January 2008 (UTC)

Added the three consensus applications from the literature as per right now (pMOSFET metal gates, DRAMs, FRAMs, ECD liners). Globalistgirl (talk) 05:33, 18 January 2008 (UTC)

Color Inconsistency

The text states that Ruthenium is "white"; the info box states that it is "silver-white", and the picture looks "dark gray" to me. Stifynsemons 08:00, 22 December 2006 (UTC)

Well, I, for one, have to admit that I'd never looked at the picture. Good call, it's not a very good picture at all of Ruthenium and I would have trouble recognising it as such. Perhaps a better picture could be found. As to the actual color of massive Ruthenium it is "silver-white" in color, the term "white" by itself usually being reserved for pure Silver. Yes, this is confusing, unless one has had the opportunity to see all of the precious metals in their massive form in one place at the same time, then it becomes quite clear what is meant. The distinctions can be obscured by surface treatments such as polishing which are the forms most commonly encountered, as in jewelry et al. Drrocket 16:43, 22 December 2006 (UTC)

Anyone work with bulk Ru? I can provide an optical micrograph or a very cropped micrograph of a ruthenium thin film, but that may or may not be appropriate. Globalistgirl (talk) 05:39, 18 January 2008 (UTC)

Organometallic chemistry

The first sentence in this block is vandalised or otherwise broken. —Preceding unsigned comment added by 130.225.102.1 (talk) 11:05, 4 February 2008 (UTC)

Price

The ruthenium spot price seems to have taken a huge leap recently (Late 2006/Early 2007). Does anyone know what is responsible for the increase? --Pyrochem 05:55, 19 February 2007 (UTC)

Ruthenium's spot price may be increasing because hard disc storage devices use it as a coating and the newer technology for the disc storage is requiring a thicker coating. TBone007 00:25, 25 March 2007 (UTC)
The price of Ruthenium has ranged from about $30 per troy oz. to nearly $1,000 per troy oz. in the last 20 years. —Preceding unsigned comment added by 86.173.242.46 (talk) 11:09, 13 May 2011 (UTC)

Bad Dot diagram

The dot diagram for this article states that it is in the Noble Gasses group, whereas ruthenium is a transitional metal in the platinum group. —The preceding unsigned comment was added by 63.228.246.132 (talk • contribs) .

The Lewis structure describes valence electrons and is unrelated to the ground state configuration. Femto 10:36, 30 April 2006 (UTC)

Yes, but ruthenium only has one electron on its outer shell, so it shouldn't have eight dots.--Floyd Elliot 02:52, 4 May 2006 (UTC) [1]

As a transition metal, it has more than that one available as valence electrons. Femto 10:52, 4 May 2006 (UTC)


Scientific American June 13, 2012 has an article about ruthenium as a possible artificial photosynthesis catalyst. While not efficient (at this point) the ability to split both water and carbon dioxide makes ruthenium very interesting! ~~Cite error: The <ref> tag has too many names (see the help page). Desiderius Erasmus (talk) 17:56, 14 June 2012 (UTC)[1]Desiderius Erasmus (talk) 17:56, 14 June 2012 (UTC)

References

  1. ^ Choi, Charles. "A New Leaf: New Catalyst Boosts Artificial Photosynthesis as a Solar Alternative to Fossil Fuel". Scientific American. Retrieved 13 June 2012.

Vestium

  • The name was recycled [2].
  • French publication 1808 [3] [4]

--Stone (talk) 20:44, 22 August 2012 (UTC)

What exactly does "ruthenic" mean?

Redirects here but not used in article. 31.54.58.79 (talk) 23:02, 23 November 2014 (UTC)

File:Ruthenium a half bar.jpg to appear as POTD

Hello! This is a note to let the editors of this article know that File:Ruthenium a half bar.jpg will be appearing as picture of the day on May 18, 2015. You can view and edit the POTD blurb at Template:POTD/2015-05-18. If this article needs any attention or maintenance, it would be preferable if that could be done before its appearance on the Main Page. Thanks! — Crisco 1492 (talk) 00:10, 29 April 2015 (UTC)

Ruthenium
Ruthenium is a rare transition metal belonging to the platinum group of the periodic table. Like the other metals of its group, ruthenium is inert to most other chemicals. The Baltic German scientist Karl Ernst Claus discovered the element in 1844, and named it after Ruthenia. Ruthenium usually occurs as a minor component of platinum ores; annual production is about 20 tonnes. Most ruthenium produced is used for wear-resistant electrical contacts and the production of thick-film resistors. A minor application of ruthenium is its use in some platinum alloys, and, like many elements located near platinum, is used in automobile catalytic converters.Photograph: Heinrich Pniok
Archive – More featured pictures...

Thick film technology

Please someone knowledgeable, pipe-link "thick-film resistors" to Thick film technology if that is appropriate. Anarchangel (talk) 20:50, 21 April 2016 (UTC)

Assessment comment

The comment(s) below were originally left at Talk:Ruthenium/Comments, and are posted here for posterity. Following several discussions in past years, these subpages are now deprecated. The comments may be irrelevant or outdated; if so, please feel free to remove this section.

* The history and the lead section needs expansion.--Stone (talk) 13:16, 16 October 2008 (UTC)

Last edited at 13:23, 16 October 2008 (UTC). Substituted at 05:07, 30 April 2016 (UTC)

Applications

Just found this article that 'chip' resistors use Ruthenium. Can this application be included?

http://www.digitimes.com/bits_chips/a20070410PD207.html —The preceding unsigned comment was added by 72.179.50.200 (talk) 03:31, 11 April 2007 (UTC).


I can confirm the Ruthenium is being used to make new hard drives. Source: JP Morgan research on the PGM industry. Hence the price movement.

Ruthenium is also used in electrochromic applications at an increasing rate. It's becomming a 'hot' area so demand is also increasing. I remember paying 3$ per gramm for RuCl3 two years ago. Now, it's 15$ per gramm!!!!!!!!!!!! This will hinder research of new electrochromes - cost too much now...

SquidgyBunny (talk) 02:32, 17 January 2008 (UTC) Whatever :]

Use in anti-cancer drugs? (still in research stage)

Wikipedia has an article on Ruthenium anti-cancer drugs. Should we add a "See also" section to Ruthenium? Oaklandguy (talk) 00:33, 22 October 2016 (UTC)

editsummary missing (?)

I edited, but the editsummary did not reach historyt.

I did: [5] revert 217.197.0.41 (talk · contribs · WHOIS).
es intended: "GF but maybe too detailed/olddated. ping User:R8R"

-DePiep (talk) 21:51, 9 November 2020 (UTC)

@DePiep: thank you for the ping. I have consulted a few Russian-language sources as well as Latin Wikipedia to clarify what the element was named after and corrected the description in the article.--R8R (talk) 11:36, 14 November 2020 (UTC)

Microelectronics

We can do better than the following. Readers come to this overview of an entire element to get a sense of reality not promises. "Ruthenium has been suggested as a material that could beneficially replace other metals and silicides in microelectronics components. Ruthenium tetroxide (RuO4) is highly volatile, as is ruthenium trioxide (RuO3) (IT IS NOT).[1] By oxidizing ruthenium (for example with an oxygen plasma) into the volatile oxides, ruthenium can be easily patterned.[2][3][4] The properties of the common ruthenium oxides make ruthenium a metal compatible with the semiconductor processing techniques needed to manufacture microelectronics.

To continue miniaturization of microelectronics, new materials are needed as dimensions change. There are three main applications for thin ruthenium films in microelectronics. The first is using thin films of ruthenium as electrodes on both sides of tantalum pentoxide (Ta2O5) or barium strontium titanate ((Ba, Sr)TiO3, also known as BST) in the next generation of three-dimensional dynamic random access memories (DRAMs).[5][6][7]

Ruthenium thin-film electrodes could also be deposited on top of lead zirconate titanate (Pb(ZrxTi1−x)O3, also known as PZT) in another kind of RAM, ferroelectric random access memory (FRAM).[8][9] Platinum has been used as the electrodes in RAMs in laboratory settings, but it is difficult to pattern. Ruthenium is chemically similar to platinum, preserving the function of the RAMs, but in contrast to Pt patterns easily. The second is using thin ruthenium films as metal gates in p-doped metal-oxide-semiconductor field effect transistors (p-MOSFETs).[10] When replacing silicide gates with metal gates in MOSFETs, a key property of the metal is its work function. The work function needs to match the surrounding materials. For p-MOSFETs, the ruthenium work function is the best materials property match with surrounding materials such as HfO2, HfSiOx, HfNOx, and HfSiNOx, to achieve the desired electrical properties. The third large-scale application for ruthenium films is as a combination adhesion promoter and electroplating seed layer between TaN and Cu in the copper dual damascene process.[11][12][13][14][15] Copper can be directly electroplated onto ruthenium,[16] in contrast to tantalum nitride. Copper also adheres poorly to TaN, but well to Ru. By depositing a layer of ruthenium on the TaN barrier layer, copper adhesion would be improved and deposition of a copper seed layer would not be necessary.

There are also other suggested uses. In 1990, IBM scientists discovered that a thin layer of ruthenium atoms created a strong anti-parallel coupling between adjacent ferromagnetic layers, stronger than any other nonmagnetic spacer-layer element. Such a ruthenium layer was used in the first giant magnetoresistive read element for hard disk drives. In 2001, IBM announced a three-atom-thick layer of the element ruthenium, informally referred to as "pixie dust", which would allow a quadrupling of the data density of current hard disk drive media.[17]" --Smokefoot (talk) 21:15, 17 January 2022 (UTC)

References

  1. ^ Pan, Wei; Desu, S. B. (1997). "Reactive Ion Etching of RuO2 Films: The Role of Additive Gases in O2 Discharge". Physica Status Solidi A. 161 (1): 201–215. Bibcode:1997PSSAR.161..201P. doi:10.1002/1521-396X(199705)161:1<201::AID-PSSA201>3.0.CO;2-U.
  2. ^ Lesaicherre, P.-Y.; Yamamichi, S.; Yamaguchi, H.; Takemura, K.; Watanabe, H.; Tokashiki, K.; Satoh, K.; Sakuma, T.; Yoshida, M.; Ohnishi, S.; Nakajima, K.; Shibahara, K.; Miyasaka, Y.; Ono, H. (1994). "A Gbit-scale DRAM stacked capacitor with ECR MOCVD SrTiO3 over RIE patterned RuO2/TiN storage nodes". Proceedings of 1994 IEEE International Electron Devices Meeting. pp. 831–834. doi:10.1109/IEDM.1994.383296. ISBN 978-0-7803-2111-3. S2CID 113907761.
  3. ^ Pan, Wei (November 1994). "Reactive Ion Etching of RuO2, Thin-Films Using the Gas-Mixture O2 CF3CFH2". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12 (6): 3208–3213. Bibcode:1993JElS..140.2635V. doi:10.1116/1.587501.
  4. ^ Saito, Shinji; Kuramasu, Keizaburo (15 January 1992). "Plasma etching of RuO2 thin films". Japanese Journal of Applied Physics. 31 (Part 1, No. 1): 135–138. Bibcode:1992JaJAP..31..135S. doi:10.1143/JJAP.31.135.
  5. ^ Aoyama, Tomonori; Eguchi, Kazuhiro (1 October 1999). "Ruthenium Films Prepared by Liquid Source Chemical Vapor Deposition Using Bis-(ethylcyclopentadienyl)ruthenium". Japanese Journal of Applied Physics. 38 (Part 2, No. 10A): L1134–L1136. Bibcode:1999JaJAP..38L1134A. doi:10.1143/JJAP.38.L1134.
  6. ^ Iizuka, Toshihiro; Arita, Koji; Yamamoto, Ichiro; Yamamichi, Shintaro; Yamaguchi, Hiromu; Matsuki, Takeo; Sone, Shuji; Yabuta, Hisato; Miyasaka, Yoichi; Kato, Yoshitake (30 April 2000). "Low Temperature Recovery of Ru/(Ba, Sr)TiO 3 /Ru Capacitors Degraded by Forming Gas Annealing". Japanese Journal of Applied Physics. 39 (Part 1, No. 4B): 2063–2067. Bibcode:2000JaJAP..39.2063I. doi:10.1143/JJAP.39.2063.
  7. ^ Yamamichi, S.; Lesaicherre, P.; Yamaguchi, H.; Takemura, K.; Sone, S.; Yabuta, H.; Sato, K.; Tamura, T.; Nakajima, K.; Ohnishi, S.; Tokashiki, K.; Hayashi, Y.; Kato, Y.; Miyasaka, Y.; Yoshida, M.; Ono, H. (July 1997). "A stacked capacitor technology with ECR plasma MOCVD (Ba,Sr)TiO3 and RuO2/Ru/TiN/TiSix storage nodes for Gb-scale DRAM's". IEEE Transactions on Electron Devices. 44 (7): 1076–1083. Bibcode:1997ITED...44.1076Y. doi:10.1109/16.595934.
  8. ^ Bandaru, Jordana; Sands, Timothy; Tsakalakos, Loucas (15 July 1998). "Simple Ru electrode scheme for ferroelectric (Pb,La)(Zr,Ti)O3 capacitors directly on silicon". Journal of Applied Physics. 84 (2): 1121–1125. Bibcode:1998JAP....84.1121B. doi:10.1063/1.368112.
  9. ^ Maiwa, Hiroshi; Ichinose, Noboru; Okazaki, Kiyoshi (30 September 1994). "Preparation and Properties of Ru and R u O 2 Thin Film Electrodes for Ferroelectric Thin Films". Japanese Journal of Applied Physics. 33 (Part 1, No. 9B): 5223–5226. Bibcode:1994JaJAP..33.5223M. doi:10.1143/JJAP.33.5223.
  10. ^ Misra, Veena; Lucovsky, Gerry; Parsons, Gregory (March 2002). "Issues in High- ĸ Gate Stack Interfaces". MRS Bulletin. 27 (3): 212–216. doi:10.1557/mrs2002.73.
  11. ^ Chan, R.; Arunagiri, T. N.; Zhang, Y.; Chyan, O.; Wallace, R. M.; Kim, M. J.; Hurd, T. Q. (2004). "Diffusion Studies of Copper on Ruthenium Thin Film". Electrochemical and Solid-State Letters. 7 (8): G154. doi:10.1149/1.1757113.
  12. ^ Cho, Sung Ki; Kim, Soo-Kil; Han, Hee; Kim, Jae Jeong; Oh, Seung Mo (2004). "Damascene Cu electrodeposition on metal organic chemical vapor deposition-grown Ru thin film barrier". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22 (6): 2649–2653. Bibcode:2004JVSTB..22.2649C. doi:10.1116/1.1819911.
  13. ^ Chyan, Oliver; Arunagiri, Tiruchirapalli N.; Ponnuswamy, Thomas (2003). "Electrodeposition of Copper Thin Film on Ruthenium". Journal of the Electrochemical Society. 150 (5): C347. doi:10.1149/1.1565138.
  14. ^ Kwon, Oh-Kyum; Kwon, Se-Hun; Park, Hyoung-Sang; Kang, Sang-Won (2004). "PEALD of a Ruthenium Adhesion Layer for Copper Interconnects". Journal of the Electrochemical Society. 151 (12): C753. Bibcode:2004JElS..151C.753K. doi:10.1149/1.1809576.
  15. ^ Kwon, Oh-Kyum; Kim, Jae-Hoon; Park, Hyoung-Sang; Kang, Sang-Won (2004). "Atomic Layer Deposition of Ruthenium Thin Films for Copper Glue Layer". Journal of the Electrochemical Society. 151 (2): G109. Bibcode:2004JElS..151G.109K. doi:10.1149/1.1640633.
  16. ^ Moffat, T. P.; Walker, M.; Chen, P. J.; Bonevich, J. E.; Egelhoff, W. F.; Richter, L.; Witt, C.; Aaltonen, T.; Ritala, M.; Leskelä, M.; Josell, D. (2006). "Electrodeposition of Cu on Ru Barrier Layers for Damascene Processing". Journal of the Electrochemical Society. 153 (1): C37. Bibcode:2006JElS..153C..37M. doi:10.1149/1.2131826.
  17. ^ Hayes, Brian (2002). "Terabyte Territory". American Scientist. 90 (3): 212. doi:10.1511/2002.9.3287.
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