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File:SiC wafers 6inch.jpg

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English: A transport box containing two six-inch (∅150mm) wafers made of silicon carbide, to be used as substrates for homoepitaxial growth of SiC transistor layers by means of MOVPE. A ballpoint pen was added as a scale. Note the wafer transparency is about 50 % over visible spectrum, due to sub-band absorption. Also note the elliptical darker area on the upper wafer, which is a characteristic trait of the production process being used.
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Source Own work
Author FDominec

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Captions

Two six-inch wafers made of silicon carbide

4 March 2022

0.01999773065752498406 second

3.59 millimetre

image/jpeg

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Date/TimeThumbnailDimensionsUserComment
current16:05, 16 May 2022Thumbnail for version as of 16:05, 16 May 2022886 × 638 (173 KB)FDominecUploaded own work with UploadWizard

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