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Summary

Description Bend extinction contour down Silicon <111>, taken with 100 keV electrons in a specimen prepared by window-method etching in HF:HNO3.
Date
Source Own work
Author P. Fraundorf

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July 1974

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d3bc4aa17d9d2076eb2fd7c2bd2fbb3318325223

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File history

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Date/TimeThumbnailDimensionsUserComment
current15:33, 30 April 2008Thumbnail for version as of 15:33, 30 April 2008920 × 920 (712 KB)Unitsphere
22:10, 28 April 2008Thumbnail for version as of 22:10, 28 April 2008927 × 945 (667 KB)Unitsphere{{Information |Description=Bend extinction contour down Silicon <111>, taken with 100 keV electrons in a specimen prepared by window-method etching in HF:HNO3. |Source=self-made |Date=July 1974 |Author= P. Fraundorf |Permission=see below |other_versions=

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